|
⇤ ← Revision 1 as of 2009-06-05 12:06:15
Size: 987
Comment:
|
Size: 984
Comment:
|
| Deletions are marked like this. | Additions are marked like this. |
| Line 1: | Line 1: |
| == To do list to determine new parameters == | == To do list to define new parameters == |
To do list to define new parameters
It is important to review past parameters and pick up problems to determine new parameters. Known problems are listed here.
- Safty factor of power on BS is 6, not 3 which was assumed before, so that PRG gain can be increased up to 29 insted of 14.5.
- Arm power was defined by sum of both arm powers. It should be a stored power of single arm.
- How to determine an exact length of arm, for anti resonance of sidebands?
- How to determine exact RF frequencies, for HOM of MC2?
- Total inject power was defiened by only carrier power. It should be defined by carrier and sidebands.
- Do we need pick off ports? Design of 2007 assumed a pick of between PRM and BS. It won't be existing in the new design, but how about pick off for X arm and Y arm? Should we use AR reflections as the pick off?
- Redesign of length of MC2 for switching between BRSE and DRSE.
- How much power is acceptable for single photo diode?